General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant

FEATUREs
    VDS                                     30V
    ID (at VGS=10V)                 30A
    RDS(ON) (at VGS=10V)    < 5mΩ
    RDS(ON) (at VGS = 4.5V) < 8.5mΩ