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AO4912L Даташит - Alpha and Omega Semiconductor

AO4912 image

Номер в каталоге
AO4912L

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8 Pages

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145.8 kB

производитель
AOSMD
Alpha and Omega Semiconductor AOSMD

General Description
The AO4912 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two
MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further
Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product ordering option. AO4912 and AO4912L are electrically identical.


FEATUREs
Q1                                Q2
VDS(V) = 30V               VDS(V) = 30V
ID= 8.5A                      ID=7A (VGS= 10V)
RDS(ON)                     < 17mΩ<26mΩ(VGS= 10V)
RDS(ON)                      < 25mΩ<31mΩ(VGS= 4.5V)

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производитель
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor

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