производитель
![AOSMD](/logo/AOSMD.png)
Alpha and Omega Semiconductor
![AOSMD](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
General Description
The AO4902 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory.Standard Product AO4902 is Pb-free (meets ROHS & Sony 259 specifications). AO4902L is a Green Product ordering option. AO4902 and AO4902L are electrically identical.
FEATUREs
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
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производитель
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Unspecified
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Unspecified
Effect Transistor with Schottky Diode Dual N-Channel Enhancement Mode Field
Unspecified
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor