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AO4900L Даташит - Alpha and Omega Semiconductor

AO4900 image

Номер в каталоге
AO4900L

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5 Pages

File Size
111.4 kB

производитель
AOSMD
Alpha and Omega Semiconductor AOSMD

General Description
The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further.Standard Product AO4900 is Pb free (meets ROHS & Sony 259 specifications).
AO4900L is a Green Product ordering option.
AO4900 and AO4900L are electrically identical.


FEATUREs
  VDS (V) = 30V
  ID = 6.9A (VGS = 10V)
  RDS(ON) < 27mΩ (VGS = 10V)
  RDS(ON) < 32mΩ (VGS = 4.5V)
  RDS(ON) < 50mΩ (VGS = 2.5V)

SCHOTTKY
  VDS (V) = 30V, IF = 3A, VF=0.5V@1A

 

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производитель
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Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Unspecified
Effect Transistor with Schottky Diode Dual N-Channel Enhancement Mode Field
Unspecified
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor

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