General Description
The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

FEATUREs
    N-Channel                         P-Channel
    VDS (V) = 20V                   -20V
    ID = 7.3A (VGS=4.5V)       -5A (VGS=-4.5V)
    RDS(ON)                            RDS(ON)
    < 23mΩ (VGS=10V)          < 53mΩ (VGS = -4.5V)
    < 30mΩ (VGS=4.5V)         < 87mΩ (VGS = -2.5V)
    < 84mΩ (VGS=2.5V)