General Description
The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

FEATUREs
    N-Channel                               P-Channel
    VDS (V) = 30V                         -30V
    ID = 7.2A (VGS=10V)              -6.1A (VGS=10V)
    RDS(ON)                                 RDS(ON)
    < 24mΩ (VGS=10V)                 < 37mΩ (VGS = -10V)
    < 40mΩ (VGS=4.5V)                < 60mΩ (VGS = -4.5V)