General Description
The AO4607 uses advanced trench technology MOSFETs to provide excellenRDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n channel FET to minimize body diode losses. AO4607 is Pb-free (meets ROHS & Sony 259 specifications). AO4607L is a Green Product ordering option. AO4607 and AO4607L are electrically identical.

FEATUREs
n-channel p-channel
VDS(V) = 30V -30V
ID= 6.9A (VGS=10V) -6A (VGS=1-0V)
RDS(ON)  RDS(ON)
< 28mΩ(VGS=10V) < 35mΩ(VGS= -10V)
< 42mΩ(VGS=4.5V) < 58mΩ(VGS=-4.5V)

SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A