30V P-Channel Enhancement Mode MOSFET
VDS= -30VRDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5mΩRDS(ON), Vgs@-4.5V, Ids@-3.0A < 87mΩ
FEATUREs Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance