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AM29LV160DB-90EE Даташит - Advanced Micro Devices

AM29LV160DT-70SE image

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AM29LV160DB-90EE

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AMD
Advanced Micro Devices AMD

GENERAL DESCRIPTION
The Am29LV160D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be program med in stand ard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — Full voltage range: 2.7 to 3.6 volt read and write
      operations for battery-powered applications
   — Regulated voltage range: 3.0 to 3.6 volt read and
      write operations and for compatibility with high
      performance 3.3 volt microprocessors
■ Manufactured on 0.23 µm process technology
   — Fully compatible with 0.32 µm Am29LV160B device
■ High performance
   — Access times as fast as 70 ns
■ Ultra low power consumption (typical values at 5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 9 mA read current
   — 20 mA program/erase current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      thirty-one 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      thirty-one 32 Kword sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a sector to prevent
      any program or erase operations within that sector
      Sectors can be locked in-system or via
      programming equipment
      Temporary Sector Unprotect feature allows code
      changes in previously locked sectors
■ Unlock Bypass Program Command
   — Reduces overall programming time when issuing
      multiple program command sequences
■ Top or bottom boot block configurations available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      preprograms and erases the entire chip or any
      combination of designated sectors
   — Embedded Program algorithm automatically
      writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per sector
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package option
   — 48-ball FBGA
   — 48-pin TSOP
   — 44-pin SO
■ CFI (Common Flash Interface) compliant
   — Provides device-specific information to the
      system, allowing host software to easily
      reconfigure for different Flash devices
■ Compatibility with JEDEC standards
   — Pinout and software compatible with single
      power supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting program
      or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting
      program or erase cycle completion (not available
      on 44-pin SO)
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from,
      or program data to, a sector that is not being
      erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading
      array data

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Номер в каталоге
Компоненты Описание
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16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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