GENERAL DESCRIPTION
ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual NChannel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications.

FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -0.4V +/- 0.02V
• Nominal RDS(ON) @VGS=0.0V of 5.4KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents

APPLICATIONS
• Functional replacement of Form B (NC) relays
• Ultra low power (nanowatt) analog and digital circuits
• Ultra low operating voltage (<0.2V) analog and digital circuits
• Sub-threshold biased and operated circuits
• Zero power fail safe circuits in alarm systems
• Backup battery circuits
• Power failure and fail safe detector
• Source followers and high impedance buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Discrete analog switches and multiplexers
• Discrete voltage comparators