PRODUCT DESCRIPTION
The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching components are needed for insertion into a 50Ω system. With a high output IP3, low noise figure, and wide band operation, the AGB3312 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3312 requires a single +5 V supply, and typically consumes 0.4 Watts of power.
FEATURES
• On-chip Active Bias
• DC-7000 MHz Operation Bandwidth
• +42 dBm Output IP3 at 850 MHz
• 5 dB Noise Figure at 850 MHz
• 11 dB Gain
• +17 dBm P1dB
• SOT-89 Package
• Single +5 V Supply
• Case Temperature: -40 to +85 °C
APPLICATIONS
• Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD systems
• Fixed Wireless
• MMDS/WLL
• WLAN