Description
Advanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. High Power and Current handing capability. Fully Characterized Avalanche Voltage and Current. Small Surface Mount Package

FEATUREs
● VDS 20V, ID =6A
● RDS(ON)=22mΩ @VGS=4.5V
● RDS(ON)=30mΩ @VGS=2.5V
● For a single mosfet