High hFE, AF Amplifier Applications

FEATUREs
• Adoption of MBIT process.
• High DC current gain (hFE=500 to 1200).
• Large current capacity.
• Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
• High VEBO (VEBO≥15V).

APPLICATIONs
• AF amplifier, various drivers, muting circuit.