○ Swtching Applications
○ Load Switch Applications
○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
                                                       (PNP Transistor)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
                                                       (PNP Transistor)
• High-speed switching: tf = 40 ns (typ.) (PNP Transistor)