DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device designed, low on-resistance and cost-effectiveness.
FEATURES
* RDS(ON)=12.5mΩ @VGS=10V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness