производитель
![UTC](/logo/UTC.png)
Unisonic Technologies
![UTC](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
Номер в каталоге
Компоненты Описание
PDF
производитель
6.2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
Intersil
6.2A, 650V N-CHANNEL POWER MOSFET
Unisonic Technologies
6.2A, 650V N-CHANNEL POWER MOSFET
Unisonic Technologies
6.2A, 650V N-CHANNEL POWER MOSFET
Unisonic Technologies
Single N-Channel, 30V, 6.2A, Power MOSFET
Will Semiconductor Ltd.
N-Channel MOSFET 250V, 6.2A, 0.55Ω
MagnaChip Semiconductor
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
600V / N-Channel Power MOSFET
ON Semiconductor
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Intersil