Description
The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.

FEATUREs
• Infineon thin-film-SOI-technology
• Maximum blocking voltage +600 V
• Output source/sink current +0.165 A/-0.375 A
• Integrated ultra-fast, low RDS(ON) Bootstrap Diode
• Insensitivity of the bridge output to negative
   transient voltages up to -50 V given by SOItechnology
• Separate control circuits for all six drivers
• Detection of over current and under voltage supply
• Externally programmable delay for fault clear after
   over current detection
• Shut down of all switches during error conditions
   CMOS and LSTTL compatible input (negative logic)
• Signal interlocking of every phase to prevent cross-conduction

Potential applications
• Home appliance, refrigeration compressors, air-conditioning
• Fans, pumps
• Motor drives, general purpose inverters
• Power tools, light electric vehicles