Description
The 4N25(G)V/ 4N35(G)V series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

APPLICATIONs
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

For appl. class I – IV at mains voltage ≤ 300 V

For appl. class I – III at mains voltage ≤ 600 V
  according to VDE 0884, table 2, suitable for: