Silicon N-Channel Power MOS FET Array

FEATUREs
•  Low on-resistance
   RDS(on) ≤0.06  , VGS = 10 V, ID= 5 A
   RDS(on) ≤0.075  , VGS = 4 V, ID= 5 A
•  Capable of 4 V gate drive
•  Low drive current
•  High speed switching
•  High density mounting
•  Suitable for motor driver and solenoid driver and lamp driver

APPLICATION
High speed power switching