Features
1. 6.5th generation
2. The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
3. Enhancement mode
4. High-speed switching
   IGBT : tf = 0.20 µs (typ.) (IC = 40 A)
   FWD : trr= 0.60 µs (typ.) (IF = 15 A)
5. Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A)
6. High junction temperature : Tj = 175(max)