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3SK296 Даташит - Renesas Electronics

3SK296 image

Номер в каталоге
3SK296

Компоненты Описание
Silicon N-Channel Dual Gate MOS FET

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
175.8 kB

производитель
Renesas
Renesas Electronics Renesas

Features
• Low noise figure.
   NF = 2.0 dB Typ. at f = 900 MHz
• Capable of low voltage operation


APPLICATION
   UHF RF amplifier

Page Link's: 1  2  3  4  5  6  7  8 

Номер в каталоге
Компоненты Описание
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