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3DG13007 Даташит - Inchange Semiconductor

3DG13007 image

Номер в каталоге
3DG13007

Компоненты Описание

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2 Pages

File Size
161.3 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector–Emitter Sustaining Voltage
   : VCEO(SUS) = 400V(Min.)
• Collector Saturation Voltage
   : VCE(sat) = 2.0(Max) @ IC= 5.0A
• Switching Time
   : tf= 0.9μ s(Max.)@ IC= 5.0A


APPLICATIONS
• Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for
   115 and 220V switchmode applications such as switching
   regulators,inverters,Motor controls,Solenoid/Relay drivers
   and deflection circuits.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Power Transistor
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Silicon NPN Power Transistor ( Rev : V2 )
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Silicon NPN Power Transistor
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New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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