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3DD13001 Даташит - Transys Electronics Limited

3DD13001 image

Номер в каталоге
3DD13001

Компоненты Описание
TO-251 Plastic-Encapsulated Transistors

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page
2 Pages

File Size
53.7 kB

производитель
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TRANSISTOR (NPN)


FEATURES
   Power dissipation
      PCM: 1.2 W (Tamb=25℃)
   Collector current
      ICM: 0.2 A
   Collector-base voltage
      V(BR)CBO: 600 V
   Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃


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