2ST5949(2008_05) Даташит - STMicroelectronics
Номер в каталоге
2ST5949
Компоненты Описание
Other PDF
PDF
page
8 Pages
File Size
138.7 kB
производитель
STMicroelectronics
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
FEATUREs
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2ST2121
■ Fast-switching speed
■ Typical ft = 25 MHz
■ Fully characterized at 125 °C
APPLICATIONs
■ Audio power amplifier
Номер в каталоге
Компоненты Описание
PDF
производитель
High power NPN epitaxial planar bipolar transistor ( Rev : 2008_11 )
STMicroelectronics
High power NPN epitaxial planar bipolar transistor ( Rev : 2008_07 )
STMicroelectronics
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