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2SK4146 Даташит - Renesas Electronics

2SK4146 image

Номер в каталоге
2SK4146

Компоненты Описание

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page
8 Pages

File Size
203.6 kB

производитель
Renesas
Renesas Electronics Renesas

Description
The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.


FEATUREs
• Low on-state resistance
  ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low input capacitance
  ⎯ Ciss = 3500 pF TYP. (VDS = 10 V)

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics

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