2SK3936(2006) Даташит - Toshiba
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2SK3936
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6 Pages
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Toshiba
Switching Regulator Applications
• Small gate charge: Qg = 60 nC (typ.)
• Fast reverse recovery time: trr = 380 ns (typ.)
• Low drain-source ON-resistance: RDS (ON) = 0.2 Ω (typ.)
• High forward transfer admittance: |Yfs| = 16.5 S (typ.)
• Low leakage current: IDSS = 500 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Номер в каталоге
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производитель
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π -MOS VI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VI) ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOS VI) ( Rev : 2007 )
Toshiba
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