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2SK3868(2004) Даташит - Toshiba

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2SK3868

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI)

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Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.)
• High forward transfer admittance: |Yfs| = 3S (typ.)
• Low leakage current: IDSS = 100 μ A (VDS = 500 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

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