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2SK367(1997) Даташит - Toshiba

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2SK367

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FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATIONS

• High Breakdown Voltage: VGDS = −100 V (Min.)
• High Input Impedance: IGSS = −1.0 nA (Max.) (VGS = −80 V)
• Small Package


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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba

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