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2SK367 Даташит - Toshiba

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2SK367

Other PDF
  1997  

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4 Pages

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629.9 kB

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Toshiba
Toshiba Toshiba

For Audio, High Voltage Amplifier and Constant Current Applications

• High breakdown voltage: VGDS = −100 V (min)
• High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)
• Small package


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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
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