2SK3565(STA4,Q,M) Даташит - Toshiba
Номер в каталоге
2SK3565(STA4,Q,M)
Компоненты Описание
Other PDF
PDF
page
6 Pages
File Size
242.1 kB
производитель
Toshiba
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) ( Rev : 2013 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba
Share Link: