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2SK3563(2003) Даташит - Toshiba

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2SK3563

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)

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Switching Regulator Applications

● Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
● High forward transfer admittance: |Yfs| = 3.5S (typ.)
● Low leakage current: IDSS = 100 μ A (VDS = 500 V)
● Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

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Компоненты Описание

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