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2SK3289 Даташит - Renesas Electronics

2SK3289 image

Номер в каталоге
2SK3289

Компоненты Описание
Silicon N Channel MOS FET High Speed Switching

Other PDF
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page
7 Pages

File Size
36 kB

производитель
Renesas
Renesas Electronics Renesas

Features
• Low on-resistance
   RDS = 1.26Ω typ. (at VGS =10V , ID =150mA)
   RDS = 2.8Ω typ. (at VGS =4V , ID =50mA)
• 4V gate drive device
• Small package (CMPAK)

Page Link's: 1  2  3  4  5  6  7 

Номер в каталоге
Компоненты Описание
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производитель
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Silicon N Channel MOS FET High Speed Switching
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