2SK3125 Даташит - Toshiba
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2SK3125
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6 Pages
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176.5 kB
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Toshiba
DC-DC Converter, Relay Drive and Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
• Enhancement model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
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