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2SK3069 Даташит - Hitachi -> Renesas Electronics

2SK3069 image

Номер в каталоге
2SK3069

Компоненты Описание

Other PDF
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PDF
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page
10 Pages

File Size
46.6 kB

производитель
Hitachi
Hitachi -> Renesas Electronics Hitachi

Features
•  Low on-resistance
RDS(on)= 6 mΩtyp.
•  Low drive current
•  4 V gate drive device can be driven from 5 V source

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics

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