2SK10A50D Даташит - Toshiba
Номер в каталоге
2SK10A50D
Компоненты Описание
Other PDF
no available.
PDF
page
6 Pages
File Size
194.2 kB
производитель
Toshiba
• Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications
Toshiba
Share Link: