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2SJ529STL-E Даташит - Renesas Electronics

2SJ529 image

Номер в каталоге
2SJ529STL-E

Компоненты Описание
Silicon P-Channel MOS FET

Other PDF
  no available.

PDF
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page
9 Pages

File Size
81 kB

производитель
Renesas
Renesas Electronics Renesas

Description
High speed power switching


FEATUREs
• Low on-resistance
   RDS (on) = 0.12 Ω typ.
• 4 V gate drive devices
• High speed switching

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