DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits.

FEATURES
• Low on-state resistance
   RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A)
   RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A)
• Low Ciss: Ciss = 1210 pF (TYP.)
• Built-in gate protection diode