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2SD971 Даташит - Inchange Semiconductor

2SD971 image

Номер в каталоге
2SD971

Компоненты Описание

Other PDF
  no available.

PDF
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page
2 Pages

File Size
101.7 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
   : V(BR)CEO = 300V(Min)
• High DC Current Gain
• High Switching Speed
• Wide Area of Safe Operation
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Designed for applications such as electronic ignition, DC
   and AC motor controls, solenoid drivers,etc.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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