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2SD314 Даташит - Inchange Semiconductor

2SD314 image

Номер в каталоге
2SD314

Компоненты Описание

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page
2 Pages

File Size
231.9 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 60V(Min)
• Low Collector-Emitter Saturation Voltage-
   : VCE(sat)= 1.0V(Max) @IC= 2.0A
• Complement to Type 2SB508
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Designed for the output stage of 15W to 25W AF power
   amplifier.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Power Transistor
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
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