ROHM Semiconductor 2SD2656T106 Даташит, 2SD2656T106 PDF, даташитов

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2SD2656T106(2013) Даташит - ROHM Semiconductor

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2SD2656T106

Компоненты Описание

NPN 1A 30V Low Frequency Amplifier Transistors

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ROHM Semiconductor

NPN 1A 30V Low Frequency Amplifier Transistors

FEATUREs
1) A Collecotr current is large.General Purpose.
2) Collector saturation voltage is low.
VCE(sat) is Max. 350mV At IC=500mA, IB=25mA
3) Complementary PNP Types : 2SB1694
4) Lead Free/RoHS Compliant.

APPLICATIONs
Driver circuit

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Компоненты Описание

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производитель

MP6X11

Midium Power Transistors (30V / 1A)

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MP6T11

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2SA659

Transistors LOW FREQUENCY POWER AMPLIFIER

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MP6Z11

Midium Power Transistors (±30V / ±1A)

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2SAR293P

Midium Power Transistors (-30V / -1A) ( Rev : 2010 )

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2SB631

100V/120V, 1A Low-Frequency Power Amplifier Applications

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GMBTA06

NPN Low Frequency Amplifier Transistor

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Guilin Strong Micro-Electronics Co., Ltd.

GM817

NPN Low Frequency Amplifier Transistor

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Guilin Strong Micro-Electronics Co., Ltd.

GMBTA05

NPN Low Frequency Amplifier Transistor

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Guilin Strong Micro-Electronics Co., Ltd.

GM9013

NPN Low Frequency Amplifier Transistor

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Guilin Strong Micro-Electronics Co., Ltd.

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