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2SD2562 Даташит - Inchange Semiconductor

2SD2562 image

Номер в каталоге
2SD2562

Компоненты Описание

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2 Pages

File Size
90.8 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min)
• High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V)
• Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) B
• Complement to Type 2SB1649


APPLICATIONS
• Designed for series regulator and general purpose applications.

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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