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2SD2276P Даташит - Inchange Semiconductor

2SD2276 image

Номер в каталоге
2SD2276P

Компоненты Описание

Other PDF
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page
2 Pages

File Size
79.3 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 140V(Min)
·High DC Current Gain-
   : hFE= 5000( Min.) @(IC= 7A, VCE= 5V)
·Low Collector Saturation Voltage-
   : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) B
·Complement to Type 2SB1503


APPLICATIONS
·Designed for power amplification.

 

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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