datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Renesas Electronics  >>> 2SD2162L PDF

2SD2162L Даташит - Renesas Electronics

2SD2162 image

Номер в каталоге
2SD2162L

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
189.4 kB

производитель
Renesas
Renesas Electronics Renesas

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.


FEATURES
• High hFE due to Darlington connection
   hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A)
• Full mold package that does not require an insulating board or insulation bushing

 

Page Link's: 1  2  3  4  5  6  7  8 

Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon Power Transistor
NEC => Renesas Technology
Silicon Power Transistor
Renesas Electronics
Silicon Power Transistor
Renesas Electronics
SILICON POWER TRANSISTOR
Comset Semiconductors
SILICON POWER TRANSISTOR
NEC => Renesas Technology
SILICON POWER TRANSISTOR
Renesas Electronics
SILICON POWER TRANSISTOR
Renesas Electronics
SILICON POWER TRANSISTOR
NEC => Renesas Technology
SILICON POWER TRANSISTOR
NEC => Renesas Technology
SILICON POWER TRANSISTOR
NEC => Renesas Technology

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]