2SD2114KT146W Даташит - ROHM Semiconductor
Номер в каталоге
2SD2114KT146W
Компоненты Описание
Other PDF
no available.
PDF
page
4 Pages
File Size
103.2 kB
производитель
ROHM Semiconductor
Features
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
Номер в каталоге
Компоненты Описание
PDF
производитель
High-current Gain Medium Power Transistor (20V, 0.5A) ( Rev : 1996 )
ROHM Semiconductor
High-current Gain Medium Power Transistor (20V, 0.5A) ( Rev : 2012 )
ROHM Semiconductor
High-current Gain Medium Power Transistor (20V, 500mA) ( Rev : 2015 )
ROHM Semiconductor
High Current Gain Medium Power NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Share Link: