2SD1619 Даташит - Inchange Semiconductor
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2SD1619
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DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 25V (Min)
• Complement to Type 2SB1119
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
• Designed for LF Amp Electronic Governor applications.
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