datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Toshiba  >>> 2SD1222 PDF

2SD1222(1999) Даташит - Toshiba

2SD1222 image

Номер в каталоге
2SD1222

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
4 Pages

File Size
169.8 kB

производитель
Toshiba
Toshiba Toshiba

SWITCHING APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
POWER AMPLIFIER APPLICATIONS

• High DC Current Gain: hFE = 2000 (Min.) (VCE = 2 V, IC = 1 A)
• Low Saturation Voltage: VCE (sat) = 1.5 V (Max.) (IC = 2 A)
• Complementary to 2SB907.


Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]