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2SD1070 Даташит - Inchange Semiconductor

2SD1070 image

Номер в каталоге
2SD1070

Компоненты Описание

Other PDF
  no available.

PDF
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page
2 Pages

File Size
229.4 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
◾ Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 100V(Min.)
◾ Good Linearity of hFE
◾ Wide Area of Safe Operation
◾ Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
◾ Designed for high power amplifier applications.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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