2SC5337-T1 Даташит - California Eastern Laboratories.
Номер в каталоге
2SC5337-T1
Компоненты Описание
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6 Pages
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172.2 kB
производитель
California Eastern Laboratories.
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
Номер в каталоге
Компоненты Описание
PDF
производитель
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
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California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
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NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics
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