Toshiba 2SC5307 Даташит, 2SC5307 PDF, даташитов

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2SC5307

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TOSHIBA Transistor Silicon NPN Triple Diffused Type

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High Voltage Switching Applications

• High breakdown voltage : VCEO = 400 V
• Low collector-emitter saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA)

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2SC5242

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )

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2SC5354

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )

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2SC5358

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )

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2SC5359

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )

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2SC5459

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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2SC5460

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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2SC5465

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )

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2SC5548A

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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2SC5549

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )

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2SC5550

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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Toshiba

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