2SC3624 Даташит - Renesas Electronics
Номер в каталоге
2SC3624
Компоненты Описание
Other PDF
no available.
PDF
page
6 Pages
File Size
323.6 kB
производитель
Renesas Electronics
FEATURES
● High DC Gurrent Gain : hFE = 1000 to 3200
● Low VCE(sat) : VCE(sat) = 0.07 V TYP.
● High VEBO : VEBO = 15 V (2SC3624A)
Номер в каталоге
Компоненты Описание
PDF
производитель
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Renesas Electronics
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD
Renesas Electronics
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
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